BSR302NL6327HTSA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionOPTIMOS POWER-TRANSISTOR
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BSR302NL6327HTSA1 Datasheet
-
ECAD Model
- Share
In Stock: 132
Can ship immediately
Pricing:
- 1$0.09
- 3,000$0.09
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Technical Details
- Series:OptiMOS™
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:23mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id:2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs:6.6 nC @ 5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):500mW (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-SC-59
- Package / Case:TO-236-3, SC-59, SOT-23-3
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