IPD50R1K4CEBTMA1

Rochester Electronics
In Stock: 157

Can ship immediately

Pricing:
  • 1$0.13
  • 2,500$0.13

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Technical Details

  • Series:CoolMOS™ CE
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):13V
  • Rds On (Max) @ Id, Vgs:1.4Ohm @ 900mA, 13V
  • Vgs(th) (Max) @ Id:3.5V @ 70µA

 

  • Gate Charge (Qg) (Max) @ Vgs:1 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:178 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):25W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TO252-3
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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