IRFHM8337TRPBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIRFHM8337 - HEXFET POWER MOSFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFHM8337TRPBF Datasheet
-
ECAD Model
- Share
In Stock: 180
Can ship immediately
Pricing:
- 1$0.16
- 4,000$0.16
- 8,000$0.15014
- 12,000$0.14521
- 28,000$0.14252
Quote It
Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:12.4mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:8.1 nC @ 4.5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:755 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):2.8W (Ta), 25W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-PQFN (3.3x3.3), Power33
- Package / Case:8-PowerTDFN
Related Products
MOSFET N-CH 40V 25A LFPAK33
- 1: $0.41000
MOSFET P-CH 30V 2.6A SC70-3
- 1: $0.45000
MOSFET P-CHANNEL 30V 12A 8SOP
- 1: $0.16500
N-CHANNEL POWER MOSFET
- 1: $0.17000
N-CHANNEL POWER MOSFET
- 1: $0.17000
N-CHANNEL POWER MOSFET
- 1: $0.17000
N-CHANNEL POWER MOSFET
- 1: $0.17000