IRLL014NPBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 55V 2A SOT223
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRLL014NPBF Datasheet
-
ECAD Model
- Share
In Stock: 153
Can ship immediately
Pricing:
- 1$0.17
- 2,320$0.17
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Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):55 V
- Current - Continuous Drain (Id) @ 25°C:2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):-
- Rds On (Max) @ Id, Vgs:140mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
- Vgs (Max):±16V
- Input Capacitance (Ciss) (Max) @ Vds:230 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):1W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-223
- Package / Case:TO-261-4, TO-261AA
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