BSZ105N04NSGATMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionOPTLMOS POWER-MOSFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BSZ105N04NSGATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 197
Can ship immediately
Pricing:
- 1$0.19
- 5,000$0.19
- 10,000$0.17689
- 25,000$0.16772
Quote It
Technical Details
- Series:OptiMOS™
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):40 V
- Current - Continuous Drain (Id) @ 25°C:11A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:10.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:4V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1.3 pF @ 20 V
- FET Feature:-
- Power Dissipation (Max):2.1W (Ta), 35W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TSDSON-8
- Package / Case:8-PowerTDFN
Related Products
MOSFET N-CH 30V 10A/28A 8PQFN DL
- 1: $0.19000
TRANSISTOR
- 1: $0.19000
N-CHANNEL MOSFET, DFN5060
- 1: $0.58000
N-CHANNEL MOSFET, DFN5060
- 1: $0.58000
MOSFET P-CHANNEL 30V 35A TO252-2
- 1: $0.19800
