IPD25N06S4L30ATMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionOPTLMOS N-CHANNEL POWER MOSFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPD25N06S4L30ATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 148
Can ship immediately
Pricing:
- 1$0.21
- 2,500$0.21
- 5,000$0.19552
- 12,500$0.19262
Quote It
Technical Details
- Series:OptiMOS™
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:30mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:2.2V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs:16.3 nC @ 10 V
- Vgs (Max):±16V
- Input Capacitance (Ciss) (Max) @ Vds:1.22 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):29W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO252-3-11
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
MOSFET N-CH 60V 1.5A TSMT6
- 1: $0.60000
P-CHANNEL SMALL SIGNAL MOSFET
- 1: $0.22000
SMALL SIGNAL N-CHANNEL MOSFET
- 1: $0.22000
POWER TRANSISTOR, MOSFET
- 1: $0.22000
POWER TRANSISTOR, MOSFET
- 1: $0.22000
MOSFET RF, SOT223
- 1: $0.22000