SISH536DN-T1-GE3

Technical Details

• Series:TrenchFET® Gen V
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:24.7A (Ta), 67.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:3.25mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:2.2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
• Vgs (Max):+16V, -12V
• Input Capacitance (Ciss) (Max) @ Vds:1150 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):3.57W (Ta), 26.5W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PowerPAK® 1212-8SH
• Package / Case:PowerPAK® 1212-8SH