IRFL4105PBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 55V 3.7A SOT223
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFL4105PBF Datasheet
-
ECAD Model
- Share
In Stock: 176
Can ship immediately
Pricing:
- 1$0.28
- 10$0.24717
- 100$0.19259
- 500$0.15506
- 1,000$0.12674
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Technical Details
- Series:HEXFET®
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):55 V
- Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:45mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):1W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-223
- Package / Case:TO-261-4, TO-261AA
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