IRLR3410PBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionHEXFET POWER MOSFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRLR3410PBF Datasheet
-
ECAD Model
- Share
In Stock: 165
Can ship immediately
Pricing:
- 1$0.29
- 10$0.25932
- 100$0.20765
- 500$0.16399
- 1,000$0.13223
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Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4V, 10V
- Rds On (Max) @ Id, Vgs:105mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:34 nC @ 5 V
- Vgs (Max):±16V
- Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):79W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D-Pak
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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