IRL8113PBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionHEXFET POWER MOSFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRL8113PBF Datasheet
-
ECAD Model
- Share
In Stock: 166
Can ship immediately
Pricing:
- 1$0.33
- 10$0.29188
- 100$0.23066
- 500$0.17888
- 1,000$0.14122
Quote It
Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:6mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id:2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:35 nC @ 4.5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2.84 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):110W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220AB
- Package / Case:TO-220-3
Related Products
N-CHANNEL MOSFET, DFN5060
- 1: $0.91000
PCH -60V -3.5A POWER MOSFET - RQ
- 1: $0.85000
PCH -30V -5A POWER MOSFET - RQ6G
- 1: $0.85000
MOSFET N-CH 20V 27A POWERDI3333
- 1: $0.87000
MOSFET N-CH 60V 20A TO252-3 DPAK
- 1: $0.33630
