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Technical Details

  • Series:HEXFET®
  • Package:Bulk
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:240mOhm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1.28 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

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