IRF7832PBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionHEXFET POWER MOSFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRF7832PBF Datasheet
-
ECAD Model
- Share
In Stock: 183
Can ship immediately
Pricing:
- 1$0.37
- 10$0.32771
- 100$0.25905
- 500$0.2009
- 1,000$0.15861
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Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:2.32V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:51 nC @ 4.5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:4.31 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):2.5W (Ta)
- Operating Temperature:-55°C ~ 155°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-SO
- Package / Case:8-SOIC (0.154", 3.90mm Width)
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