IPD50R650CEBTMA1

Technical Details

• Series:CoolMOS™ CE
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):500 V
• Current - Continuous Drain (Id) @ 25°C:9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:650mOhm @ 1.8A, 13V
• Vgs(th) (Max) @ Id:3.5V @ 150µA

• Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:342 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):69W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:-
• Supplier Device Package:-
• Package / Case:-