BSP300L6327HUSA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 800V 190MA SOT223-4
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BSP300L6327HUSA1 Datasheet
-
ECAD Model
- Share
In Stock: 143
Can ship immediately
Pricing:
- 1$0.45
Quote It
Technical Details
- Series:SIPMOS®
- Package:Bulk
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):800 V
- Current - Continuous Drain (Id) @ 25°C:190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:20Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id:4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:230 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):1.8W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-SOT223-4
- Package / Case:TO-261-4, TO-261AA
Related Products
N-CHANNEL POWER MOSFET
- 1: $0.45000
SMALL SIGNAL N-CHANNEL MOSFET
- 1: $0.45000
MOSFET N-CHANNEL 650V 5A TO252-2
- 1: $0.45000
MOSFET N-CHANNEL 60V 45A 8DFN
- 1: $0.45000
MOSFET N-CHANNEL 650V 5A TO251
- 1: $0.45000
MOSFET N-CHANNEL 650V 4A TO220-3
- 1: $0.45000
-
- 1: $0.99000
