RM115N65T2

Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):65 V
• Current - Continuous Drain (Id) @ 25°C:115A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:4.7mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):+20V, -12V
• Input Capacitance (Ciss) (Max) @ Vds:5900 pF @ 30 V
• FET Feature:-
• Power Dissipation (Max):160W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-220-3
• Package / Case:TO-220-3