IPD50N06S4L08ATMA2
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 50A TO252-31
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPD50N06S4L08ATMA2 Datasheet
-
ECAD Model
- Share
In Stock: 105
Can ship immediately
Pricing:
- 1$1.14
- 2,500$0.42805
Quote It
Technical Details
- Series:Automotive, AEC-Q101, OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:7.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:2.2V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
- Vgs (Max):±16V
- Input Capacitance (Ciss) (Max) @ Vds:4780 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):71W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO252-3-11
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
MOSFET N-CH 75V 100A TO262
- 1: $0.53000
SMALL SIGNAL N-CHANNEL MOSFET
- 1: $0.53000
N-CHANNEL POWER MOSFET
- 1: $0.53000
MOSFET N-CH 85V 120A TO220-3
- 1: $0.53000