IPS65R600E6AKMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPFET, 650V, 0.6OHM, 1-ELEMENT, N
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPS65R600E6AKMA1 Datasheet
-
ECAD Model
- Share
In Stock: 159
Can ship immediately
Pricing:
- 1$0.53
- 1,500$0.53
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Technical Details
- Series:CoolMOS™ E6
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:600mOhm @ 2.1A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 210µA
- Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):63W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO251-3
- Package / Case:TO-251-3 Stub Leads, IPak
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