BTS113AE3064NKSA1

Technical Details

• Series:TEMPFET®
• Package:Tube
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:11.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V
• Rds On (Max) @ Id, Vgs:170mOhm @ 5.8A, 4.5V
• Vgs(th) (Max) @ Id:2.5V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±10V
• Input Capacitance (Ciss) (Max) @ Vds:560 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):40W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:P-TO220AB
• Package / Case:TO-220-3