NVATS5A113PLZT4G
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CHANNEL 60V 38A ATPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NVATS5A113PLZT4G Datasheet
-
ECAD Model
- Share
In Stock: 112
Can ship immediately
Pricing:
- 1$1.62
- 3,000$1.47161
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:38A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4V, 10V
- Rds On (Max) @ Id, Vgs:29.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 20 V
- FET Feature:-
- Power Dissipation (Max):60W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:ATPAK
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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