IRFH5007TR2PBF

Rochester Electronics
In Stock: 125

Can ship immediately

Pricing:
  • 1$1

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Technical Details

  • Series:HEXFET®
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):75 V
  • Current - Continuous Drain (Id) @ 25°C:17A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:5.9mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id:4V @ 150µA

 

  • Gate Charge (Qg) (Max) @ Vgs:98 nC @ 10 V
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:4.29 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-PQFN (5x6)
  • Package / Case:8-PowerTDFN

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