IPD65R250E6XTMA1

Technical Details

• Series:CoolMOS™ E6
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:16.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:250mOhm @ 4.4A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 400µA

• Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 1 V
• FET Feature:-
• Power Dissipation (Max):208W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-TO252-3
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63