IRFS4127PBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionHEXFET POWER MOSFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFS4127PBF Datasheet
-
ECAD Model
- Share
In Stock: 137
Can ship immediately
Pricing:
- 1$1.33
- 10$1.19408
- 100$0.99241
- 500$0.81768
- 1,000$0.7012
Quote It
Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:22mOhm @ 44A, 10V
- Vgs(th) (Max) @ Id:5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:5.38 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):375W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D2PAK
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
MOSFET N CH
- 1: $2.59000
- 2500: $1.25155
MOSFET N-CH 100V 100A TO220AB
- 1: $1.34410
MOSFET N-CH 40V 45A/240A 8HPSOF
- 1: $2.91000
N-CHANNEL POWER MOSFET
- 1: $1.35000
PFET, 27A I(D), 150V, 0.15OHM, 1
- 1: $1.35000
MOSFET N-CH 60V 17A TO220AB
- 1: $1.35000