IRFD123PBF
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 1.3A 4DIP
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFD123PBF Datasheet
-
ECAD Model
- Share
In Stock: 162
Can ship immediately
Pricing:
- 1$1.45
- 2,500$0.616
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:270mOhm @ 780mA, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:360 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):1.3W (Ta)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:4-DIP, Hexdip, HVMDIP
- Package / Case:4-DIP (0.300", 7.62mm)
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