IRFBA90N20DPBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIRFBA90N20 - SMPS HEXFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFBA90N20DPBF Datasheet
-
ECAD Model
- Share
In Stock: 189
Can ship immediately
Pricing:
- 1$3.41
- 50$2.79686
- 100$2.52402
- 500$2.1147
- 1,000$1.84184
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Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:23mOhm @ 59A, 10V
- Vgs(th) (Max) @ Id:5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:240 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:6.08 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):650W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:SUPER-220™ (TO-273AA)
- Package / Case:TO-273AA
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