SCT10N120H

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1200 V
• Current - Continuous Drain (Id) @ 25°C:12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):20V
• Rds On (Max) @ Id, Vgs:690mOhm @ 6A, 20V
• Vgs(th) (Max) @ Id:3.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:22 nC @ 20 V
• Vgs (Max):+25V, -10V
• Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 400 V
• FET Feature:-
• Power Dissipation (Max):150W (Tc)
• Operating Temperature:-55°C ~ 200°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:H2Pak-2
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB