NTBG080N120SC1

ON Semiconductor
In Stock: 176

Can ship immediately

Pricing:
  • 1$11.78

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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):20V
  • Rds On (Max) @ Id, Vgs:110mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id:4.3V @ 5mA

 

  • Gate Charge (Qg) (Max) @ Vgs:56 nC @ 20 V
  • Vgs (Max):+25, -15V
  • Input Capacitance (Ciss) (Max) @ Vds:1154 pF @ 800 V
  • FET Feature:-
  • Power Dissipation (Max):179W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK-7
  • Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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