NTP8G202NG
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionGANFET N-CH 600V 9A TO220-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NTP8G202NG Datasheet
-
ECAD Model
- Share
In Stock: 157
Can ship immediately
Pricing:
- 1$14.51
- 10$13.42084
- 100$11.46205
Quote It
Technical Details
- Series:-
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):8V
- Rds On (Max) @ Id, Vgs:350mOhm @ 5.5A, 8V
- Vgs(th) (Max) @ Id:2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:9.3 nC @ 4.5 V
- Vgs (Max):±18V
- Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 400 V
- FET Feature:-
- Power Dissipation (Max):65W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220-3
- Package / Case:TO-220-3
Related Products
MOSFET N-CH 650V 77A TO247-3-41
- 1: $14.91000
N-CHANNEL POWER MOSFET
- 1: $17.07000
TRANS SJT N-CH 1.2KV 47A TO263
- 1: $23.78000
HIGH POWER_NEW
- 1: $17.60000