TSM2N7000KCT B0G

TSC (Taiwan Semiconductor)
In Stock: 120

Can ship immediately

Pricing:
  • 1$0.08082
  • 10,000$0.08082

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Not For New Designs
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Rds On (Max) @ Id, Vgs:5Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:0.4 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:7.32 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):400mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-92
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)

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