CSD25501F3

Texas Instruments
In Stock: 162

Can ship immediately

Pricing:
  • 1$0.09275
  • 3,000$0.09275
  • 6,000$0.0876
  • 15,000$0.07987

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Technical Details

  • Series:FemtoFET™
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:76mOhm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id:1.05V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:1.33 nC @ 4.5 V
  • Vgs (Max):-20V
  • Input Capacitance (Ciss) (Max) @ Vds:385 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):500mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:3-LGA (0.73x0.64)
  • Package / Case:3-XFLGA

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