SSM6J207FE,LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 30V 1.4A ES6
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SSM6J207FE,LF Datasheet
-
ECAD Model
- Share
In Stock: 135
Can ship immediately
Pricing:
- 1$0.11899
- 4,000$0.11899
- 8,000$0.11178
- 12,000$0.10457
- 28,000$0.10096
Quote It
Technical Details
- Series:U-MOSII
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4V, 10V
- Rds On (Max) @ Id, Vgs:251mOhm @ 650mA, 10V
- Vgs(th) (Max) @ Id:2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:137 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):500mW (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:ES6 (1.6x1.6)
- Package / Case:SOT-563, SOT-666
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