IPD60R3K4CEAUMA1

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:2.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:3.4Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id:3.5V @ 40µA

• Gate Charge (Qg) (Max) @ Vgs:4.6 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:93 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):29W (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-TO252-3
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63