BSS225H6327XTSA1

IR (Infineon Technologies)
In Stock: 137

Can ship immediately

Pricing:
  • 1$0.18768
  • 1,000$0.18768

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Technical Details

  • Series:SIPMOS™
  • Package:Tape & Reel (TR)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:90mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:45Ohm @ 90mA, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 94µA

 

  • Gate Charge (Qg) (Max) @ Vgs:5.8 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:131 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT89
  • Package / Case:TO-243AA

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