QS5U26TR

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:200mOhm @ 1.5A, 4.5V
• Vgs(th) (Max) @ Id:2V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:4.2 nC @ 4.5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:325 pF @ 10 V
• FET Feature:Schottky Diode (Isolated)
• Power Dissipation (Max):1.25W (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TSMT5
• Package / Case:SOT-23-5 Thin, TSOT-23-5