SI1431DH-T1-E3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:1.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:200mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id:3V @ 100µA

• Gate Charge (Qg) (Max) @ Vgs:4 nC @ 4.5 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:-
• FET Feature:-
• Power Dissipation (Max):950mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SC-70-6 (SOT-363)
• Package / Case:6-TSSOP, SC-88, SOT-363