SIAA00DJ-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 25V 20.1A/40A PPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SIAA00DJ-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 136
Can ship immediately
Pricing:
- 1$0.27072
- 3,000$0.27072
- 6,000$0.25315
- 15,000$0.24437
- 30,000$0.23957
Quote It
Technical Details
- Series:TrenchFET® Gen IV
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):25 V
- Current - Continuous Drain (Id) @ 25°C:20.1A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:5.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
- Vgs (Max):+16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds:1090 pF @ 12.5 V
- FET Feature:-
- Power Dissipation (Max):3.5W (Ta), 19.2W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® SC-70-6 Single
- Package / Case:PowerPAK® SC-70-6
Related Products
MOSFET N-CH 80V 4.7A/12A 8WDFN
- 1: $0.27358
MOSFET N-CH 100V 4A 6UDFN
- 1: $0.27434
- 3000: $0.27434
MOSFET N-CH 30V 15A PWRDI3333
- 1: $0.27530
- 3000: $0.27530
MOSFET N-CH 30V 15A PWRDI3333
- 1: $0.27530
- 2500: $0.27530
