SI1404BDH-T1-E3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:1.9A (Ta), 2.37A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:238mOhm @ 1.9A, 4.5V
• Vgs(th) (Max) @ Id:1.3V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:2.7 nC @ 4.5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:100 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):1.32W (Ta), 2.28W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SC-70-6 (SOT-363)
• Package / Case:6-TSSOP, SC-88, SOT-363