SIHLR120-GE3

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:7.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4V, 5V
• Rds On (Max) @ Id, Vgs:270mOhm @ 4.6A, 5V
• Vgs(th) (Max) @ Id:2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:12 nC @ 5 V
• Vgs (Max):±10V
• Input Capacitance (Ciss) (Max) @ Vds:490 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):2.5W (Ta), 42W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:D-PAK (TO-252AA)
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63