TPN2R805PL,L1Q
Toshiba Electronic Devices and Storage Corporation- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 45V 139A/80A 8TSON
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TPN2R805PL,L1Q Datasheet
-
ECAD Model
- Share
In Stock: 103
Can ship immediately
Pricing:
- 1$0.3375
- 5,000$0.3375
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Technical Details
- Series:U-MOSIX-H
- Package:Tape & Reel (TR)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):45 V
- Current - Continuous Drain (Id) @ 25°C:139A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:2.8mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:2.4V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:3.2 nF @ 22.5 V
- FET Feature:-
- Power Dissipation (Max):2.67W (Ta), 104W (Tc)
- Operating Temperature:175°C
- Mounting Type:Surface Mount
- Supplier Device Package:8-TSON Advance (3.3x3.3)
- Package / Case:8-PowerVDFN
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