DMT12H090LFDF4-13

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):115 V
• Current - Continuous Drain (Id) @ 25°C:3.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):3V, 10V
• Rds On (Max) @ Id, Vgs:90mOhm @ 3.5A, 10V
• Vgs(th) (Max) @ Id:2.2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:251 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):900mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:X2-DFN2020-6
• Package / Case:6-PowerXDFN