SIHU3N50DA-GE3

Vishay / Siliconix
In Stock: 161

Can ship immediately

Pricing:
  • 1$0.37004
  • 3,000$0.37004

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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:3.2Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:177 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):69W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:IPAK (TO-251)
  • Package / Case:TO-251-3 Long Leads, IPak, TO-251AB

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