TSM130NB06CR RLG
TSC (Taiwan Semiconductor)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 10A/51A 8PDFN
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TSM130NB06CR RLG Datasheet
-
ECAD Model
- Share
In Stock: 139
Can ship immediately
Pricing:
- 1$0.38775
- 2,500$0.35572
- 5,000$0.34346
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:10A (Ta), 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:13mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2380 pF @ 30 V
- FET Feature:-
- Power Dissipation (Max):3.1W (Ta), 83W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-PDFN (5x6)
- Package / Case:8-PowerTDFN
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