NTMYS4D5N04CTWG

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:20A (Ta), 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:4.5mOhm @ 35A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 50µA

• Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
• Vgs (Max):20V
• Input Capacitance (Ciss) (Max) @ Vds:1150 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):3.6W (Ta), 55W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:4-LFPAK
• Package / Case:SOT-1023, 4-LFPAK