LND150N3-G-P014

Technical Details

• Series:-
• Package:Tape & Box (TB)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):500 V
• Current - Continuous Drain (Id) @ 25°C:30mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On):0V
• Rds On (Max) @ Id, Vgs:1000Ohm @ 500µA, 0V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:10 pF @ 25 V
• FET Feature:Depletion Mode
• Power Dissipation (Max):740mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-92-3
• Package / Case:TO-226-3, TO-92-3 (TO-226AA)