FQU5N50CTU-WS

ON Semiconductor
In Stock: 10,220

Can ship immediately

Pricing:
  • 1$0.42734
  • 5,040$0.42734

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Technical Details

  • Series:QFET®
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.4Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:625 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 48W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:I-PAK
  • Package / Case:TO-251-3 Short Leads, IPak, TO-251AA

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