TPN4R203NC,L1Q
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N CH 30V 23A 8TSON-ADV
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TPN4R203NC,L1Q Datasheet
-
ECAD Model
- Share
In Stock: 133
Can ship immediately
Pricing:
- 1$0.43744
- 5,000$0.43744
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Technical Details
- Series:U-MOSVIII
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:23A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:4.2mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id:2.3V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):700mW (Ta), 22W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-TSON Advance (3.3x3.3)
- Package / Case:8-PowerVDFN
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