SIJ800DP-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 40V 20A PPAK SO-8
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SIJ800DP-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 103
Can ship immediately
Pricing:
- 1$0.4774
- 3,000$0.4774
Quote It
Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):40 V
- Current - Continuous Drain (Id) @ 25°C:20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:9.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 20 V
- FET Feature:-
- Power Dissipation (Max):4.2W (Ta), 35.7W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® SO-8
- Package / Case:PowerPAK® SO-8
Related Products
MOSFET N-CH 60V 17A/71A 5DFN
- 1: $0.48048
MOSFET N-CH 80V 7A/22A 5DFN
- 1: $0.48131
MOSFET N-CH 60V 16A/64.6A 8DFN
- 1: $0.48140
MOSFET N-CH 60V 16A/64.6A 8DFN
- 1: $0.48141
