TJ10S04M3L(T6L1,NQ
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 40V 10A DPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TJ10S04M3L(T6L1,NQ Datasheet
-
ECAD Model
- Share
In Stock: 118
Can ship immediately
Pricing:
- 1$0.539
- 2,000$0.52769
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Technical Details
- Series:U-MOSVI
- Package:Tape & Reel (TR)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):40 V
- Current - Continuous Drain (Id) @ 25°C:10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):6V, 10V
- Rds On (Max) @ Id, Vgs:44mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
- Vgs (Max):+10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds:930 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):27W (Tc)
- Operating Temperature:175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:DPAK+
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
