SISS40DN-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 36.5A PPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SISS40DN-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 168
Can ship immediately
Pricing:
- 1$0.5544
- 3,000$0.24986
- 6,000$0.23813
- 15,000$0.22975
Quote It
Technical Details
- Series:ThunderFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:36.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):6V, 10V
- Rds On (Max) @ Id, Vgs:21mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:845 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):3.7W (Ta), 52W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
- Package / Case:PowerPAK® 1212-8S
Related Products
MOSFET N-CH 500V 2A CPT3
- 1: $0.55440
- 2500: $0.54277
MOSFET 800V TDSON-8
- 1: $0.55440
