UPA2825T1S-E2-AT
Renesas Electronics America
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 8HVSON
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet UPA2825T1S-E2-AT Datasheet
-
ECAD Model
- Share
In Stock: 128
Can ship immediately
Pricing:
- 1$0.5678
- 5,000$0.5678
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Technical Details
- Series:-
- Package:Tape & Reel (TR)
- Part Status:Last Time Buy
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:4.6mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2600 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):1.5W (Ta), 16.5W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:-
- Package / Case:8-PowerWDFN
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