DMT6009LJ3

Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:74.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:10mOhm @ 13.5A, 10V
• Vgs(th) (Max) @ Id:2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:33.5 nC @ 10 V
• Vgs (Max):±16V
• Input Capacitance (Ciss) (Max) @ Vds:1925 pF @ 30 V
• FET Feature:-
• Power Dissipation (Max):2.9W (Ta), 83.3W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-251
• Package / Case:TO-251-3 Short Leads, IPak, TO-251AA